I.B.M. has designed a new material that could increase the speed of semiconductors and reduce their energy consumption, The New York Times reports.
The advance involves a manufacturing process that uses heat to create trillions of atomic-scale holes in a thin layer of material deposited on top of the conducting wires at different stages of chip making.
I.B.M. says the insulation technique can increase chip speed as much as 35 percent with a 15 percent reduction in energy consumption.
I.B.M. plans to share the new technology approach with its manufacturing and technology partners.
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